DMN3023L-13

$0.09

Description：MOSFET N-CH 30V 6.2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:cf2420e210c2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6.2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：873 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3023L-13

Overview

The DMN3023L-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT23 surface-mount package and operates with a drain-source voltage of 30V. The device provides a continuous drain current of 6.2A at +25°C, reducing to 4.9A at +70°C. Static drain-source on-resistance is specified as 25mΩ at VGS=10V and 28mΩ at VGS=4.5V. Total gate charge is 18.4nC at VGS=10V. Operating and storage temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards for automotive reliability

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and is halogen-free. Ensure the application environment remains within the specified thermal limits and does not exceed the maximum ratings defined in the datasheet.

Selection Notes

Select this component when a compact SOT23 footprint is required for 30V applications. Consider the 6.2A continuous current rating and low RDS(ON) characteristics for efficient power switching. Evaluate the thermal resistance values against the expected ambient temperature and duty cycle requirements.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The product utilizes silicon technology and is designed for general-purpose power management tasks.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as V(BR)DSS, ID, and RDS(ON). Verify package compatibility and pinout alignment before implementation.