DMN3028LQ-13

$0.12

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:552c82a8a5cf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：860mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3028LQ-13

Overview

The DMN3028LQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a temperature range of -55°C to +150°C. The device provides a continuous drain current of 6.2A at 25°C, with an on-resistance of 25mΩ at VGS=10V and 28mΩ at VGS=4.5V. Packaged in SOT-23, it includes gate protection diodes and meets AEC-Q101 automotive qualification standards.

Feature Summary

Automotive-grade reliability with AEC-Q101 qualification and PPAP capability for specific change control requirements.
Integrated ESD protected gate structure utilizing internal body diode protection.
Optimized low on-resistance and low gate threshold voltage for efficient power management applications.

Applications

Load switching circuits
DC-DC converters
Power management functions

Procurement Notes

Verify the complete part number including the suffix to confirm packaging specifications. Confirm that the required automotive quality standards align with project needs. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual operating conditions. Validate component authenticity through authorized distribution channels.

Selection Notes

Select this component when a compact single N-channel solution is required for low-voltage automotive systems. Consider the SOT-23 package constraints regarding thermal dissipation and current handling capabilities. Evaluate the gate charge characteristics against driver circuit limitations to ensure adequate switching performance.

Part Context

This component belongs to the DMN3028 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing robust performance in small surface-mount packages suitable for space-constrained electronic designs requiring high reliability.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics precisely.