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Product Detailed Parameters
- Description：MOSFET N-CH 30V 7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.3 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：570 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMN3042LFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 7.0 A at +25°C ambient temperature. The device offers a typical static drain-source on-resistance (R_DS(ON)) of 17 mΩ at V_GS = 10 V and 20 mΩ at V_GS = 4.5 V. Packaged in a U-DFN2020-6 (Type F) surface-mount case with a 0.6 mm profile, it supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free status. Ensure the selected part number matches the intended thermal and electrical requirements for the target application design.
Selection Notes
Select this component based on its 30 V breakdown voltage and 7 A continuous current capability. Evaluate the R_DS(ON) values at relevant gate drive voltages to ensure conduction losses meet system efficiency targets. Consider the U-DFN2020-6 package dimensions and thermal resistance characteristics for PCB layout and heat dissipation planning.
Part Context
This component belongs to the DMN3042LFDF series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type F) molded plastic case. The device is designed to minimize on-state resistance while maintaining superior switching performance for compact electronic designs.
Replacement Considerations
Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Verify pinout compatibility, electrical ratings, and package dimensions before replacing the original component in existing circuit designs.
