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Product Detailed Parameters
- Description：MOSFET N-CH 28V 1.6A SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：28 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：88mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：305 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN3150LW-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It operates with a drain-source voltage of 28 V and supports a continuous drain current of 1.6 A at +25°C, decreasing to 1.2 A at +70°C. The device features low on-resistance, specified as less than 88 mΩ at VGS = 4.5V and less than 138 mΩ at VGS = 2.5V. It utilizes a SOT323 surface-mount package.
Feature Summary
- Low static drain-source on-resistance for efficient power handling
- Low gate threshold voltage enabling effective drive from low logic levels
- Fast switching speed supported by low input capacitance
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- Power management circuits requiring low resistance switching
- Battery protection systems utilizing low threshold control
- General purpose switching applications in portable electronics
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets RoHS compliance requirements for your region. Ensure the supplier provides traceability documentation consistent with automotive qualification standards if applicable to the design.
Selection Notes
Select this component when a compact SOT323 footprint is required alongside low conduction losses. Evaluate the thermal resistance characteristics against the expected ambient temperature conditions. Consider the pulsed drain current capability for transient load scenarios within the absolute maximum ratings.
Part Context
This part belongs to the DMN3150 series of N-channel MOSFETs designed for low-voltage switching applications. The device integrates a single channel within a molded plastic case rated for UL flammability classification 94V-0. It is constructed using silicon technology suitable for automated surface mount assembly processes.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Verify pinout compatibility and electrical parameter alignment before implementing any alternative components.
