DMN3190LDWQ-13

$0.06

Description：MOSFET 2N-CH 30V 1A SOT363
Series：-

SKU:2066c491506a Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 1A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Rds On (Max) @ Id, Vgs：190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：87pF @ 20V
Power - Max：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN3190LDWQ-13

Overview

The DMN3190LDWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of ±20V. The device offers low on-resistance, rated at a maximum of 190mΩ at VGS=10V and 335mΩ at VGS=4.5V. Continuous drain current reaches 1A at 25°C and 0.75A at 4.5V gate drive. Total power dissipation is 0.32W at 25°C in steady state. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for high reliability automotive use
Totally lead-free and fully RoHS compliant, halogen and antimony free
ESD protected gate structure integrated within the SOT363 package

Applications

Motor Control
DC-DC Converters
Load Switch

Procurement Notes

Verify component authenticity by checking the marking code against official Diodes Incorporated documentation. Confirm the specific ordering suffix matches the required tape and reel quantity. Ensure compliance with automotive quality standards if used in safety-critical systems. Validate datasheet revision compatibility during procurement.

Selection Notes

Select this component for space-constrained designs requiring dual N-channel functionality in an SOT363 package. Consider the 30V breakdown voltage and low on-resistance characteristics for efficient switching applications. Evaluate thermal performance based on PCB copper coverage requirements specified in the datasheet.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the SOT363 surface-mount case configuration. The product is specifically engineered to meet stringent automotive industry reliability requirements.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-reference electrical parameters such as BVDSS, RDS(ON), and package dimensions before implementation.