DMN31D4UFZ-7B

$0.15

Description：MOSFET BVDSS: 25V~30V X2-DFN0606
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8b8b343822a6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V X2-DFN0606
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：15.4 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0606-3
Package / Case：3-XFDFN

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DMN31D4UFZ-7B

Overview

The DMN31D4UFZ-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGSS) rating of ±12 V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 1.5 Ω at VGS = 4.5 V with a continuous drain current (ID) of 0.31 A at +25°C. Additional RDS(ON) specifications include 2.0 Ω at VGS = 2.5 V, 3.0 Ω at VGS = 1.8 V, and 4.5 Ω at VGS = 1.5 V. Total gate charge (Qg) is 0.3 nC. The component operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN0606-3 package.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance.
Features a very low gate threshold voltage with a maximum value of 1.0 V.
Includes ESD protection on the gate terminal.
Constructed with a lead-free, fully RoHS compliant, halogen-free, and antimony-free green molding compound.

Applications

General purpose interfacing switches
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes documentation to confirm the 10k Tape & Reel packing quantity and carrier type. Ensure the requested part number matches the exact datasheet revision DS44181 Rev. 2 - 2. Confirm compliance requirements such as RoHS 3 and IATF 16949 manufacturing standards if automotive applications are intended.

Selection Notes

Select this component when a compact footprint is required due to its 0.62mm x 0.62mm package dimensions. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate the thermal characteristics, specifically the junction-to-ambient thermal resistance of 403 °C/W, to ensure adequate heat dissipation for the intended steady-state power dissipation limits.

Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining high efficiency in power management circuits. The product is classified as a new advanced information item, indicating recent introduction or updated specifications within the manufacturer's discrete semiconductor portfolio.