DMN31D5L-7

$0.25

Description：MOSFET N-CH 30V 500MA SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5c1dd5abf2c1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 500MA SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN31D5L-7

Overview

The DMN31D5L-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a surface-mount SOT-23 case. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 0.5A at +25°C. The maximum static drain-source on-resistance (RDS(ON)) is specified as 1.5Ω at VGS = 4.0V and 2.0Ω at VGS = 2.5V. Total gate charge (Qg) reaches 1.2nC at VGS = 10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Motor control circuits
Power management functions
Backlighting applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the halogen-free and antimony-free 'Green' device definition provided by the manufacturer. Ensure the selected package variant matches the intended PCB layout requirements for the SOT-23 footprint.

Selection Notes

Select this component when a compact N-channel MOSFET with a 30V rating is required for low-current switching tasks. The SOT-23 package suits space-constrained designs. Evaluate the RDS(ON) specifications against the system's gate drive voltage to ensure adequate conduction performance. Consider the thermal resistance characteristics if operating near the upper temperature limits.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. These devices are designed for general-purpose switching applications where small form factors and high efficiency are prioritized.