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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X2-DFN0604
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：410mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.38 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：22.6 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：380mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0604-3
- Package / Case：3-XFDFN
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Overview
The DMN31D5UFO-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGSS) rating of ±12 V. The device offers low on-resistance, with RDS(ON) values ranging from 1.5 Ω at VGS = 4.5 V to 4.5 Ω at VGS = 1.5 V. Continuous drain current (ID) is rated at 0.41 A at +25°C. The component utilizes an X2-DFN0604-3 package with a 0.6mm x 0.4mm footprint.
Feature Summary
- Low package profile with a 0.6mm x 0.4mm footprint
- Very low gate threshold voltage with a maximum of 1.0 V
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, as datasheets may list variations such as 'Tape & Reel'. Ensure compliance requirements match project specifications, including RoHS 2/3 directives and Halogen/Antimony-free status. Confirm that the X2-DFN0604-3 package dimensions align with PCB layout constraints before finalizing procurement.
Selection Notes
Select this component for applications requiring a compact form factor and low on-resistance at reduced gate drive voltages. The low gate threshold voltage supports efficient operation in low-voltage control circuits. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance and power dissipation limits under steady-state conditions. Ensure the operating temperature range meets environmental requirements.
Part Context
This part belongs to the DMN31D5 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series includes variants with different packaging options, such as SOT-323 and SOT-363, designed for general-purpose switching and power management. The DMN31D5UFO specifically utilizes the X2-DFN0604-3 case style for space-constrained designs.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated representatives for verified equivalent parts. Do not assume functional interchangeability with other MOSFETs based solely on similar voltage or current ratings without verifying pinout compatibility and electrical characteristics.
