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Product Detailed Parameters
- Description：MOSFET N-CH 30V 350MA SOT523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：13.6 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：320mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN31D6UT-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 350mA at +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 1.5Ω at VGS = 4.5V and 2.0Ω at VGS = 2.5V. Total gate charge (Qg) is typically 0.35nC. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Motor control circuits
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation. Ensure compatibility with SOT523 footprint layouts during procurement planning.
Selection Notes
Select this component for applications requiring low on-resistance within a compact SOT523 package. Consider the 30V breakdown voltage and 350mA continuous current limits when designing circuit protection. Evaluate thermal performance based on the junction-to-ambient resistance values provided in the datasheet for your specific PCB layout conditions.
Part Context
This part belongs to the DMN31D6UT series of N-channel MOSFETs designed for general-purpose switching and power management. It utilizes silicon technology and is housed in a lead-free SOT523 case. The device is intended for surface mount assembly and supports automated manufacturing processes.
Replacement Considerations
The DMN31D6UT-13 serves as a direct replacement variant differing only in packaging quantity (10,000 units per reel). Verify electrical parameter equivalence before substituting other N-channel MOSFETs in the same voltage and current class.
