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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.4A SOT353
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：400mA
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：39pF @ 3V
- Power - Max：280mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package：SOT-353
- Grade：-
- Qualification：-
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Overview
The DMN32D2LDF-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a SOT-353 surface mount package and operates with a drain-source voltage of 30 V and a continuous drain current of 400 mA. The device exhibits low on-resistance, reaching 1.2 Ω at VGS = 4.0 V and ID = 100 mA, alongside a maximum gate threshold voltage of 1.2 V. Total power dissipation is rated at 280 mW with a thermal resistance of 446 °C/W. Dynamic characteristics include an input capacitance of 39 pF and turn-on/turn-off times of 11 ns and 51 ns respectively.
Feature Summary
- Dual N-channel configuration in a compact SOT-353 package
- Low static drain-source on-resistance for efficient conduction
- Very low gate threshold voltage enabling easy drive compatibility
- ESD protected gate structure for enhanced reliability
Applications
- Battery protection circuits
- Load switching applications
- Power management systems
Procurement Notes
Verify the component authenticity against the official Diodes Incorporated datasheet DS31238 Rev. 3-2. Confirm the marking code KDV matches the specific part number to ensure correct identification. Check for RoHS compliance and AEC-Q 101 qualification status as documented in the manufacturer's specifications before finalizing procurement.
Selection Notes
Select this component for designs requiring dual N-channel MOSFETs in space-constrained environments. Ensure the operating voltage does not exceed the 30 V drain-source limit and that the thermal design accommodates the 446 °C/W junction-to-ambient resistance. Verify that the gate drive voltage aligns with the low threshold voltage characteristics for optimal switching performance.
Part Context
This component belongs to the DMN series of dual N-channel enhancement mode field effect transistors from Diodes Incorporated. It is designed for general-purpose switching applications where small form factor and low on-resistance are critical. The SOT-353 package provides a compact solution suitable for portable electronics and battery-powered devices.
Replacement Considerations
No official substitute part numbers are listed in the provided documentation. When considering alternatives, verify pinout compatibility, electrical ratings, and package dimensions. Cross-compatibility should be confirmed through detailed comparison of datasheet parameters rather than assumed based on package type alone.
