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Product Detailed Parameters
- Description：MOSFET N-CH 30V 750MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：64.3 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMN3730UFB-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 0.91A at +25°C, reducing to 0.73A at +70°C. The device exhibits a maximum on-resistance (RDS(on)) of 460mΩ at VGS=4.5V and 560mΩ at VGS=2.5V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation of 0.69W. The component utilizes an X1-DFN1006-3 package.
Feature Summary
- Ultra-low profile 0.5mm package with a 0.6mm² footprint for space-constrained designs
- Low gate threshold voltage enabling direct drive from battery sources
- ESD protected gate structure rated up to 2kV
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- Load switching circuits
- Portable electronic devices
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the required marking code 'NE' aligns with your assembly labeling specifications. Ensure procurement channels are authorized to guarantee product authenticity and compliance with RoHS directives.
Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage switching tasks. The small X1-DFN1006-3 package offers significant area reduction compared to traditional SOT-23 packages. Consider the thermal resistance characteristics and derating curves if operating in environments exceeding +25°C ambient temperature.
Part Context
This part belongs to the DMN37 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN3730UFB variant specifically targets applications requiring a balance of low conduction losses and minimal physical footprint in portable electronics.
Replacement Considerations
Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified alternatives. Ensure any replacement matches the 30V VDSS rating, 0.91A ID capability, and X1-DFN1006-3 package dimensions to maintain board compatibility.
