DMN4034SSSQ-13

$0.24

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:16475d986320 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN4034SSSQ-13

Overview

The DMN4034SSSQ-13 is a 40V N-channel enhancement mode MOSFET in an SO-8 package. It features a maximum drain-source voltage (BVDSS) of 40V and continuous drain current (ID) of 6.5A at TA=+25°C. The static drain-source on-resistance (RDS(ON)) is 34mΩ max at VGS=10V and 59mΩ max at VGS=4.5V. Total gate charge (Qg) is 18nC max at VGS=10V. Operating temperature range is -55°C to +150°C.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Manufactured in IATF 16949 certified facilities for specific change control requirements.
Includes 100% unclamped inductive switching (UIS) testing during production.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the complete part number including the suffix '-13' to confirm the SO-8 case and tape & reel packaging quantity. Confirm that the design requires AEC-Q101 qualification and PPAP documentation, as these are specific to this automotive-grade variant. Ensure the application environment aligns with the specified thermal resistance values for the chosen PCB layout.

Selection Notes

Select this component when a 40V N-channel MOSFET with low RDS(ON) is required for automotive systems. The SO-8 package provides adequate thermal performance for power management and DC-DC converter designs. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at either 4.5V or 10V.

Part Context

This device belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It is specifically engineered to meet stringent automotive reliability standards. The 'SSSQ' designation indicates the SO-8 package and automotive qualification, while the '-13' suffix denotes the standard 2,500-unit tape and reel packaging format.