DMN4800LSSL-13

$0.50

Description：MOSFET N-CH 30V 8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5dd41821b5a2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：798 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.46W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN4800LSSL-13

Overview

The DMN4800LSSL-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 8.0A at 25°C. The device offers a low on-state resistance of 14mΩ at VGS=10V and 20mΩ at VGS=4.5V. Total gate charge is 8.7nC, with input capacitance of 798pF. It operates within an ambient temperature range of -55°C to +150°C and dissipates up to 1.46W in an SO-8 package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features low input capacitance and fast switching speed characteristics.
Exhibits low input and output leakage currents.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

DC-DC Converters
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the SO-8 case material utilizes molded plastic with a UL flammability classification rating of 94V-0. Ensure compliance requirements match EU Directive 2002/95/EC (RoHS) standards and verify terminal finish specifications as matte tin annealed over copper leadframe.

Selection Notes

Select this component when applications require a 30V N-channel MOSFET with optimized RDS(on) values at both 10V and 4.5V gate drive levels. The SO-8 package provides a compact footprint suitable for surface mount assembly. Evaluate thermal resistance parameters against PCB pad layout constraints to ensure total power dissipation limits are not exceeded during steady-state operation.

Part Context

This part belongs to the DMN4800LSSL series from Diodes Incorporated. It is classified as a silicon-based N-channel enhancement mode field-effect transistor. The product is designed for general-purpose switching applications requiring low conduction losses. It is distinct from dual-channel variants or higher voltage ratings within the broader DMN family.

Replacement Considerations

Consult official manufacturer documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.