DMN52D0UW-7

Overview

The DMN52D0UW-7 is a 50V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an SOT323 package and is designed for high-efficiency power management applications. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 50V, a maximum gate-source voltage (VGSS) of ±12V, and a continuous drain current (ID) of 380mA at TA = +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 4.0Ω max at VGS = 1.8V, 2.5Ω max at VGS = 2.5V, and 2.0Ω max at VGS = 5.0V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Low on-resistance with very low gate threshold voltage
• Fast switching speed and low input capacitance
• ESD protected with integrated gate protection diode
• Totally lead-free and fully RoHS compliant

Applications

• Load switches
• Level switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen/antimony-free requirements. Ensure the selected part matches the required SOT323 surface-mount package dimensions and thermal characteristics for your specific PCB layout constraints.

Selection Notes

Select this component when designing circuits requiring a compact N-channel MOSFET with a 50V rating. Consider the RDS(ON) specifications at various gate voltages to ensure compatibility with your logic levels. Evaluate the thermal resistance and power dissipation limits relative to your expected operating conditions and ambient temperatures.

Part Context

This component belongs to the DMN52D0U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series utilizes silicon technology and is housed in small outline packages suitable for space-constrained electronic designs.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure equivalent electrical ratings and pin configurations.

FAQ

What is the maximum continuous drain current for the DMN52D0UW-7?

The maximum continuous drain current is 380mA at an ambient temperature of +25°C.

Is the DMN52D0UW-7 ESD protected?

Yes, the device includes an integrated gate protection diode and is explicitly described as ESD protected.