DMN52D0UWQ-7

$0.05

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a4a93f14ab07 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN52D0UWQ-7

Overview

The DMN52D0UWQ-7 is a dual N-channel enhancement mode MOSFET in an SOT323 package. It features a drain-source voltage (BVDSS) of 50V and a maximum continuous drain current (ID) of 380mA at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 2Ω max at VGS=5V, 2.5Ω max at VGS=2.5V, and 4Ω max at VGS=1.8V. The gate threshold voltage (VGS(TH)) ranges from 0.49V to 1.0V. Operating temperature spans -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive applications with PPAP capability
Low on-resistance optimized for low-voltage switching
Very low gate threshold voltage enabling efficient drive
ESD protected design with fast switching speed

Applications

Load switches
Level switches

Procurement Notes

Verify the component against Diodes Incorporated datasheet DS44904 Rev. 2-2. Confirm the marking code '5DK' matches the specific batch date code. Ensure the ordering suffix '-7' corresponds to the 3,000-unit reel packaging format. Validate RoHS compliance status through official manufacturer channels prior to integration.

Selection Notes

Select this component for circuits requiring a 50V breakdown voltage and compact SOT323 footprint. Consider the RDS(ON) specifications at various gate voltages when designing low-power control logic. Verify thermal dissipation requirements against the junction-to-ambient resistance values provided in the datasheet for the target PCB layout.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It is designed specifically for automotive environments, meeting stringent quality standards including IATF 16949 certification. The device utilizes silicon technology and is housed in a lead-free, halogen-free molded plastic package suitable for surface-mount assembly.

Replacement Considerations

Consult the official Diodes Incorporated documentation for direct equivalents. Cross-referencing requires matching BVDSS, ID, RDS(ON), and package dimensions. Verify that any substitute also holds AEC-Q101 qualification if automotive reliability is required.