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Product Detailed Parameters
- Description：MOSFET N-CH 50V 280MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.7V
- Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN5L06W-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 50 V and a continuous drain current (ID) of 280 mA at 25°C. The device has a maximum gate-source voltage (VGSS) of ±20 V and a total power dissipation (Pd) of 200 mW. Electrical characteristics include a gate threshold voltage (VGS(th)) ranging from 0.49 V to 1.2 V, with a static drain-source on-resistance (RDS(ON)) between 1.6 Ω and 4 Ω depending on test conditions. Input capacitance (Ciss) is typically 50 pF.
Feature Summary
- Ultra-small surface mount package design
- Low input/output leakage characteristics
- Fast switching speed capability
- Lead-free and RoHS compliant construction
Applications
- Battery protection circuits
- Power management applications
- General-purpose switching
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets the required environmental standards for lead-free and RoHS compliance as specified in the manufacturer documentation. Ensure the SOT-323 package dimensions align with the target PCB layout requirements before finalizing procurement.
Selection Notes
Select this component when a compact N-channel MOSFET with a 50 V breakdown voltage is required for low-current switching tasks. The device is suitable for designs prioritizing minimal footprint due to its SOT-323 package. Consider the thermal resistance and power dissipation limits when determining heat sinking needs or PCB copper area allocation for the intended operating temperature range.
Part Context
This part belongs to the DMN5L06 series of N-channel enhancement mode field effect transistors produced by Diodes Incorporated. The series utilizes silicon technology and is designed for general-purpose switching applications requiring small form factors. The product line emphasizes low on-resistance and fast switching performance within ultra-small surface mount packages.
Replacement Considerations
Consult official datasheets for cross-reference compatibility. Verify pinout alignment, voltage ratings, and package dimensions against alternative suppliers before substitution.
