DMN6010SCTB-13

$1.15

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:759071ae0f30 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2692 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 312W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DMN6010SCTB-13

Overview

The DMN6010SCTB-13 is a 60V N-channel enhancement mode MOSFET in a TO263AB (D2PAK) package. It features a maximum drain-source on-resistance of 10mΩ at VGS=10V and supports a continuous drain current of 128A at TC=+25°C. The device has a total power dissipation of 312W at TC=+25°C, with a junction-to-case thermal resistance of 0.4°C/W. Gate charge is 46nC at VDS=44V, ID=25A, and VGS=10V.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for robustness
Low RDS(on) to minimize conduction power losses
Low Qg to minimize switching losses
Qualified to JEDEC standards for high reliability

Applications

Motor Controls
Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 800-unit reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance requirements and ensure the application environment aligns with the specified operating temperature range of -55°C to +150°C.

Selection Notes

Select this component when designing circuits requiring high-efficiency power management with significant current handling capabilities. The low gate charge and optimized on-resistance make it suitable for applications where minimizing both conduction and switching losses is critical for overall system performance.

Part Context

This part belongs to Diodes Incorporated's generation of N-channel enhancement mode MOSFETs designed to balance low on-state resistance with superior switching performance. It utilizes a TO263AB (D2PAK) surface-mount package with a molded plastic body and matte tin annealed terminal finish over a copper leadframe.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other manufacturers' equivalents.

FAQ

Is the DMN6010SCTB-13 qualified for automotive use?

The standard DMN6010SCTB-13 is not explicitly designated as an automotive-grade part. For automotive applications requiring AEC-Q qualification and PPAP capability, customers should refer to the related automotive grade parts with the Q-suffix.