DMN6010SCTBQ-13

$1.08

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3505a79d393d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2692 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 312W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DMN6010SCTBQ-13

Overview

The DMN6010SCTBQ-13 is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 128A at TC = +25°C. The device exhibits a typical static drain-source on-resistance (RDS(on)) of 7.7mΩ at VGS = 10V and ID = 25A, with a maximum of 10mΩ. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
100% Unclamped Inductive Switching (UIS) tested in production
Low gate charge minimizes switching losses
Lead-free finish and RoHS compliant

Applications

Motor Controls
Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the component meets specific automotive change control requirements by confirming AEC-Q101 qualification status and PPAP capability. Ensure sourcing from authorized channels to guarantee compliance with IATF 16949 manufacturing standards. Validate package integrity and marking codes against official datasheet specifications prior to integration.

Selection Notes

Select this component for high-current automotive power management designs requiring robust UIS reliability. Evaluate thermal resistance parameters based on the TO263AB (D2PAK) package constraints. Consider the low RDS(on) characteristics for minimizing conduction losses in motor control and DC-DC converter topologies operating at 60V systems.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes a TO263AB (D2PAK) surface-mount package suitable for high-power dissipation. The device is manufactured in IATF 16949 certified facilities, ensuring consistency for critical automotive electronic systems.