DMN601WKQ-13

$0.05

Description：MOSFET N-CH 60V SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9d27e4b842fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN601WKQ-13

Overview

The DMN601WKQ-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a continuous drain current of 300mA at 25°C ambient temperature. The device exhibits a maximum on-resistance of 2.0Ω at VGS=10V and ID=0.5A, with a gate threshold voltage up to 2.5V. It operates within a junction temperature range of -65°C to +150°C and dissipates up to 200mW of power. Packaged in an SOT-323 (SC-70) housing, it includes an integrated ESD protection diode.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Features low on-resistance and low gate threshold voltage for efficient switching.
Includes built-in ESD protected gate structure.
Manufactured using halogen-free and antimony-free green materials.

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets IATF 16949 facility requirements if automotive change control protocols are mandated for the target assembly process.

Selection Notes

Select this component when a small-form-factor N-channel MOSFET is required for automotive-grade circuits. Ensure the application current remains below the 300mA continuous limit and that the thermal environment supports the specified 200mW dissipation rating without exceeding the maximum junction temperature constraints.

Part Context

This part belongs to the DMN601 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards, distinguishing it from general-purpose variants through its qualification processes and manufacturing certifications.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-referencing requires matching the SOT-323 package, 60V BVDSS rating, and automotive AEC-Q101 qualification status to ensure functional compatibility.