DMN6040SFDE-7

$0.47

Description：MOSFET N-CH 60V 5.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f54b61c26395 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 5.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：38mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

Download product information

DMN6040SFDE-7

Overview

The DMN6040SFDE-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current of 5.3A at +25°C, increasing to 6.5A for short pulses under 10 seconds. The device offers a typical static drain-source on-resistance of 30mΩ at VGS=10V and 35mΩ at VGS=4.5V. Packaged in a U-DFN2020-6 (Type E) footprint with a 0.6mm profile, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features a low-profile 0.6mm package with a compact PCB footprint of 4mm² ideal for space-constrained applications.
Qualified to JEDEC standards for high reliability and tested 100% for unclamped inductive switching (UIS).
Constructed with lead-free, fully RoHS compliant materials that are halogen and antimony free.

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packing configuration as defined in the manufacturer's documentation. Confirm that the U-DFN2020-6 (Type E) package dimensions align with the target PCB layout requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020 handling guidelines during assembly processes.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 60V switching applications. The U-DFN2020-6 package provides a small footprint suitable for dense board layouts. Consider the thermal resistance characteristics and available copper area for heat dissipation when designing the power stage circuitry.

Part Context

This part belongs to the DMN6040 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series includes variants with different packaging options such as TSOT-26 and DPAK to accommodate various thermal and spatial design constraints within consumer and industrial electronic systems.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade part DMN6040SFDEQ. Verify pinout compatibility and electrical parameters before substituting other 60V N-channel MOSFETs in existing designs.

FAQ

Is the DMN6040SFDE-7 qualified for automotive applications?

No, this specific part is not automotive qualified. For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, the DMN6040SFDEQ should be used.