DMN6069SE-13

$0.39

Description：MOSFET N-CH 60V 4.3A/10A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a3ac676150f9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 4.3A/10A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Ta), 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：69mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：825 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-3
Package / Case：TO-261-4, TO-261AA

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DMN6069SE-13

Overview

The DMN6069SE-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 4.3A at +25°C ambient temperature. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 69mΩ at VGS=10V and 100mΩ at VGS=4.5V. Packaged in an SOT-223 surface-mount configuration, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Features fast switching speed capabilities suitable for transformer driving switches.
Includes 100% Unclamped Inductive Switch (UIS) testing during production.
Constructed with lead-free finish and complies with RoHS directives.

Applications

Motor controls
Transformer driving switches
DC-DC converters
Power-management functions
Uninterrupted power supplies

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the component meets the required JEDEC standards for high reliability if utilized in demanding environments. Ensure the selected package variant matches the thermal requirements of the target PCB layout.

Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(ON) is required for compact designs. The SOT-223 package provides a balance between thermal dissipation and board space efficiency. Consider the gate threshold voltage characteristics for logic-level compatibility in control circuits requiring efficient switching performance.

Part Context

This part belongs to the DMN6069 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The DMN6069SE-13 represents the standard commercial grade version packaged for automated surface-mount assembly processes.

Replacement Considerations

An automotive-compliant alternative is available under the separate datasheet designation DMN6069SEQ. Verify pinout compatibility and electrical parameter tolerances before substituting with other 60V N-channel devices in the SOT-223 package.