DMN6075SQ-7

$0.43

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:340dd3f36ea7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：85mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：606 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN6075SQ-7

Overview

The DMN6075SQ-7 is a 60V N-channel enhancement mode MOSFET in an SOT23 package. It features a maximum drain-source voltage of 60V and continuous drain currents of 2.0A at +25°C (VGS=10V) or 2.5A under optimized thermal conditions. The on-resistance is 85mΩ max at VGS=10V and 120mΩ max at VGS=4.5V. Gate threshold voltage ranges from 1V to 3V, with a total gate charge of 12.3nC at VGS=10V. Operating temperature spans -55°C to +150°C.

Feature Summary

Qualified for automotive applications per AEC-Q101 standards
Low on-resistance for efficient power management
Fast switching speed with low input capacitance
Manufactured in IATF16949:2016 certified facilities

Applications

DC-DC converters
Power management functions
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix (-7 for 3000 units/reel or -13 for 10000 units/reel) matches your packaging requirements. Confirm that the component meets AEC-Q101 qualification and PPAP capabilities if required for your automotive supply chain. Ensure the SOT23 footprint aligns with your PCB design guidelines.

Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(ON) is needed for automotive-grade reliability. Consider the 85mΩ resistance at 10V drive or 120mΩ at 4.5V drive based on your control logic. Verify thermal dissipation needs against the 0.8W rating at +25°C ambient without thermal vias.

Part Context

This part belongs to the DMN60 series of N-channel enhancement mode MOSFETs by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 surface-mount case. The device is designed to meet stringent automotive industry requirements while maintaining high performance in compact form factors.

Replacement Considerations

Check datasheets for alternative parts offering similar 60V ratings and comparable RDS(ON) values. Ensure any substitute maintains the SOT23-3 package dimensions and AEC-Q101 qualification if automotive compliance is mandatory.