DMN62D2UQ-13

$0.04

Description：2N7002 FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0f69aaaaa926 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN62D2UQ-13

Overview

The DMN62D2UQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 390mA at 25°C, with an on-resistance of 2.0Ω at VGS=5.0V. Packaged in SOT-23, it includes gate protection and meets AEC-Q101 automotive qualification standards.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards
Includes integrated gate protection diode
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Motor controls
Power management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets IATF 16949 manufacturing requirements if your supply chain mandates PPAP documentation. Ensure compatibility with standard SMD/SMT surface mount assembly processes.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and low input capacitance. It is suitable for applications demanding fast switching speeds and low leakage currents. Verify that the required gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the DMN62D2U family of N-channel MOSFETs designed specifically for stringent automotive environments. It shares core electrical characteristics with other variants in the series but differs in packaging quantities and specific qualification certifications.