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The DMN62D2UTQ-7 is a 60V N-channel enhancement mode MOSFET in an SOT523 package. It features a maximum drain-source voltage of 60V and gate-source voltage of ±20V. The device offers low on-resistance, with maximum values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 334mA at +25°C. Total power dissipation is rated at 0.4W to 0.5W depending on mounting conditions. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix (e.g., -7 or -13) to confirm the tape and reel quantity matches your production requirements. Confirm that the AEC-Q101 qualification and PPAP capability are required for your specific automotive application standards. Ensure the SOT523 package dimensions align with your PCB footprint design before finalizing procurement.
Select this component when a compact SOT523 form factor is required for 60V switching applications. Consider the low gate threshold voltage for compatibility with lower drive logic levels. Evaluate the thermal resistance characteristics against your expected duty cycle and ambient temperature constraints to ensure reliable operation within the specified junction temperature limits.
This part belongs to Diodes Incorporated's DMN62 series of N-channel MOSFETs designed for small-signal switching. The series includes various packages such as SOT-323 and X1-DFN1212-3. The DMN62D2UTQ specifically targets automotive environments requiring high reliability and compliance with IATF 16949 manufacturing standards.
DMN62D2UW-7
Yes, it is AEC-Q101 qualified, supported by PPAP, and manufactured in IATF 16949 certified facilities.
The maximum continuous drain current is 334mA at TA = +25°C.