DMN62D4LFB4-7B

Overview

The DMN62D4LFB4-7B is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 60V, a maximum gate-source voltage (VGSS) of ±20V, and a continuous drain current (ID) of 527mA at 25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 2Ω at VGS=10V and 3Ω at VGS=5V. Total power dissipation is rated at 0.5W steady state, with a thermal resistance (RθJA) of 249°C/W.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
• Features low input capacitance and fast switching speed characteristics.
• Compliant with RoHS standards and halogen/antimony-free green device specifications.

Applications

• Load switches
• High-efficiency power-management applications

Procurement Notes

Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packing quantity and carrier type details. Ensure that the component selection aligns with the required thermal management capabilities and operating temperature ranges specified in the datasheet. Confirm compliance requirements such as RoHS and lead-free status directly from the supplier's certification documents prior to procurement.

Selection Notes

Select this component based on its 60V rating and low on-resistance profile suitable for compact designs. Evaluate the thermal resistance and power dissipation limits relative to the expected load conditions. Consider the ultra-small X2-DFN1006-3 package dimensions for space-constrained PCB layouts. Verify that the gate threshold voltage meets the driving circuit requirements for optimal switching efficiency.

Part Context

This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for low-voltage applications requiring efficient power handling in minimal footprints. The series utilizes silicon technology and is packaged in lead-free, fully RoHS-compliant formats suitable for automated surface-mount assembly processes.

Replacement Considerations

Consult official manufacturer substitution guides or contact Diodes Incorporated representatives for verified equivalent parts. Do not assume cross-compatibility with other manufacturers' components without validating pinout, electrical ratings, and thermal characteristics against the original datasheet specifications.

FAQ

What is the maximum pulsed drain current for the DMN62D4LFB4-7B?

The maximum pulsed drain current is 1A, measured under a 10µs pulse duration with a duty cycle of 1%.

Does the DMN62D4LFB4-7B support automotive applications?

For automotive applications requiring specific change control, AEC-Q qualification, or PPAP capability, customers must contact Diodes Incorporated or their local representative directly.