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Product Detailed Parameters
- Description：MOSFET N-CH 30V 350MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：23.2 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN63D8L-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 350mA at 25°C. The device offers a low on-resistance of 2.8Ω at VGS=10V and 3.8Ω at VGS=5V. Packaged in an SOT23 case, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Qualified to AEC-Q101 standards for high reliability
Applications
- Motor control circuits
- Power management functions
- Backlighting applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure the SOT23 package dimensions align with the PCB footprint design. Check for any recent datasheet revisions that may affect electrical characteristics or mechanical data.
Selection Notes
Select this component when a compact single N-channel MOSFET is needed for low-voltage switching. Consider the thermal resistance values based on the expected PCB copper area. Evaluate the gate threshold voltage compatibility with the driving logic levels. Assess the pulsed drain current capability against transient load requirements.
Part Context
This part belongs to the DMN63 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. These devices are designed for high-efficiency power management applications requiring small surface mount packages.
Replacement Considerations
Check for direct substitutes within the same manufacturer's portfolio that share identical pinouts and electrical ratings. Verify if alternative packages offer improved thermal performance for the same application constraints.
