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Product Detailed Parameters
- Description：MOSFET N-CH 75V 23A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 35 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN7022LFGQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage of 75 V and supports a continuous drain current of 23 A. Key electrical characteristics include a maximum on-resistance of 4.6 mΩ at a gate-source voltage of 10 V, with a gate charge of 59 nC. It operates within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- High current handling capability suitable for power switching applications
- Low on-resistance for efficient power management
- Automotive-grade reliability qualification
Applications
- Automotive power distribution systems
- Load switching circuits
- Polarity protection modules
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact tape-and-reel quantities and packaging specifications. Ensure that the component meets all relevant automotive qualification standards required for your specific design implementation before finalizing procurement orders.
Selection Notes
Select this component when a high-current N-channel switch is required in a compact PowerDI3333-8 footprint. Consider its low on-resistance and high thermal stability for applications demanding robust performance under varying load conditions and elevated temperatures.
Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching and power management tasks, offering a balance of high current capacity and low resistance in an industry-standard small outline package.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers.
