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Product Detailed Parameters
- Description：MOSFET N-CH 950V 6A ITO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：950 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.3 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1487 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
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Overview
The DMN95H2D2HCTI is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 950V and a continuous drain current (ID) of 6A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is typically 1.7Ω with a maximum of 2.2Ω at VGS = 10V and ID = 3A. The device operates within a junction temperature range of -55°C to +150°C and is housed in an ITO220AB through-hole package.
Feature Summary
- Complementary dual MOSFET configuration designed for low on-resistance and fast switching performance.
- High BVDSS rating suitable for demanding power applications.
- Low input capacitance and low input/output leakage characteristics.
- RoHS compliant, lead-free finish, and halogen and antimony free.
Applications
- Motor controls
- Backlighting
- DC-DC converters
- Power management functions
Procurement Notes
This component is officially marked as obsolete and discontinued by the manufacturer. Verify availability status directly with authorized distributors or Diodes Incorporated representatives before initiating any procurement process. Do not assume standard supply chain availability for this part number.
Selection Notes
Select this component only if the specific 950V breakdown voltage and complementary dual topology are required for the circuit design. Ensure thermal management strategies account for the specified power dissipation limits and thermal resistance values under intended operating conditions.
Part Context
The DMN95H2D2HCTI belongs to the DMN95 series of high-voltage N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for high-efficiency power management applications requiring robust voltage handling capabilities in a compact through-hole form factor.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet. Consult Diodes Incorporated technical support for potential alternative components compatible with the required specifications.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) rating is ±30V.
Is this component suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/104/200 qualification, PPAP capability, and IATF 16949 manufacturing, contact Diodes Incorporated or a local representative directly.
