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Product Detailed Parameters
- Description：MOSFET N-CH 100V 55A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMNH10H028SK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and a maximum on-resistance of 28mΩ at VGS=10V. The device supports a continuous drain current of 55A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO252 (DPAK) housing, it is designed for high ambient temperature environments.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching capability
- Low gate charge minimizes switching losses
- Qualified to AEC-Q101 standards with PPAP support
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the complete part number includes the -13 suffix for tape and reel packaging. Confirm that the specific application requires automotive-grade components qualified under AEC-Q101 standards. Ensure design parameters align with the specified thermal resistance values and maximum ratings provided in the official datasheet.
Selection Notes
Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low on-resistance and optimized gate charge characteristics make it suitable for efficient power switching applications where reliability and thermal stability are critical requirements.
Part Context
This device belongs to the DMNH series of automotive-grade silicon MOSFETs from Diodes Incorporated. Manufactured in IATF 16949 certified facilities, the product line targets stringent automotive quality standards. The TO252 package provides an effective balance between electrical performance and thermal dissipation capabilities.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent part numbers. Do not substitute based solely on generic parameter matching without confirming package compatibility and automotive qualification status.
