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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMNH6069SFVW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI3333-8 surface-mount package with wettable flanks. Key electrical parameters include a maximum on-resistance of 50mΩ at VGS=10V and 63mΩ at VGS=4.5V. Continuous drain current reaches 18A at TC=+25°C, supported by a thermal resistance from junction to case of 3.9°C/W.
Feature Summary
- Rated for operation up to +175°C junction temperature for high ambient environments
- Passes 100% unclamped inductive switching (UIS) testing during production
- PowerDI3333-8 package occupies 33% less board area compared to SO-8 packages
- Features wettable flanks to facilitate improved optical inspection processes
Applications
- DC-DC converters
- High efficiency power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the 'H' designation indicates the specific high-temperature variant qualified to JEDEC standards. Ensure compatibility with the PowerDI3333-8 footprint dimensions and recommended pad layout provided in the manufacturer's mechanical data documentation.
Selection Notes
Select this component when applications require a compact form factor combined with high thermal endurance up to 175°C. The low on-resistance minimizes conduction losses, while the small package size supports higher density designs. Verify that the 60V breakdown voltage and 18A continuous current capabilities align with the specific circuit requirements and thermal dissipation constraints.
Part Context
This part belongs to the DMN series of N-channel MOSFETs designed for general-purpose switching applications. It represents an evolution in surface-mount technology by utilizing the PowerDI platform to reduce physical footprint while maintaining robust electrical performance. The device is intended for use in modern electronic systems where space optimization and thermal reliability are critical design factors.
Replacement Considerations
The datasheet identifies the DMNH6069SFVW-7 as an alternative version within the same product family, differing only in the reel quantity of 2,000 units instead of 3,000.
