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The DMP1005UFDF-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source voltage (BVDSS) and an ultra-low on-resistance of 8.5mΩ at VGS = -4.5V, enabling high efficiency in power management applications. The device supports a continuous drain current of -26A at TC = +25°C and utilizes a compact U-DFN2020-6 package with a 0.6mm profile.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance standards, including RoHS 3 and halogen-free requirements, prior to final procurement decisions.
Select this component for designs requiring low-profile surface-mount integration and minimal conduction losses. The U-DFN2020-6 package offers a small PCB footprint suitable for space-constrained layouts. Ensure the application operates within the specified thermal limits and voltage ratings to maintain optimal switching performance and reliability.
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for use in high-efficiency power management circuits where low profile and high current handling are critical design parameters.
DMP1005UFDF-7
The maximum gate-source voltage (VGSS) rating is ±8V.
For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated directly.