DMP1008UCA9-7

$0.24

Description：MOSFET P-CH 8V 16A X2-DSN1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:521f5ccb73c6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 8V 16A X2-DSN1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：8 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：952 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DSN1515-9
Package / Case：9-SMD, No Lead

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DMP1008UCA9-7

Overview

The DMP1008UCA9-7 is a P-channel enhancement mode MOSFET utilizing LD-MOS technology. It features an -8V drain-source voltage and a maximum continuous drain current of -16A at +25°C. The device achieves a typical on-resistance of 5.7mΩ at VGS = -4.5V with a total gate charge of 9.5nC. It operates within a temperature range of -55°C to +150°C and is housed in an X2-DSN1515-9 package.

Feature Summary

LD-MOS technology engineered for minimized on-state losses and ultra-fast switching capabilities
Chip-Scale Package (CSP) design providing low thermal impedance and high power density
Low gate threshold voltage enabling low turn-on potential operation
Integrated ESD protection for the gate terminal

Applications

DC-DC Converters
Battery Management Systems
Load Switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and ensure the supplier provides documentation verifying halogen and antimony-free manufacturing processes as specified by Diodes Incorporated.

Selection Notes

Select this component for applications requiring high efficiency power transfer and minimal footprint area. The low RDS(ON) per unit area makes it suitable for space-constrained designs. Ensure the operating voltage does not exceed the -8V limit and verify that the thermal management strategy accommodates the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes third-generation lateral MOSFET (LD-MOS) technology. The device is designed to optimize performance through reduced on-state resistance and fast switching speeds, distinguishing it from standard planar MOSFETs.

Replacement Considerations

Consult official Diodes Incorporated substitution guides or equivalent circuit analysis before replacing. Verify pin compatibility and electrical parameter alignment, specifically drain-source voltage and on-resistance, to ensure functional equivalence in the target application.