DMP1010UCA4-7

$0.13

Description：MOSFET BVDSS: 8V~24V X2-DSN1212-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c4356b3436b7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DSN1212-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：8 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：9.9mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：699 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：630mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DSN1212-4
Package / Case：4-SMD, No Lead

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DMP1010UCA4-7

Overview

The DMP1010UCA4 is a P-Channel Enhancement Mode MOSFET utilizing LD-MOS technology. It features an -8V drain-source voltage (VDSS) and a maximum continuous drain current of -10A at +25°C. The device achieves a low on-resistance of 9.9mΩ at VGS = -4.5V, with a total gate charge of 7.0nC for ultra-fast switching. It operates within a temperature range of -55°C to +150°C and is housed in an X2-DSN1212-4 package.

Feature Summary

LD-MOS Technology minimizes on-state losses while enabling ultra-fast switching capabilities
Low profile CSP design increases power density through minimal footprint area and low thermal impedance
Gate threshold voltage optimized for low turn-on potential requirements
ESD protected gate structure ensures robustness against electrostatic discharge events

Applications

Battery protections
Battery managements
Load switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packing quantity of 3,000 units as documented in the manufacturer's ordering information. Confirm that the X2-DSN1212-4 package dimensions align with your PCB layout constraints before finalizing procurement decisions.

Selection Notes

Select this component when high-efficiency power transfer is required due to its minimized on-state losses. The low gate threshold voltage facilitates easy drive integration, while the compact chip-scale package supports designs demanding high power density within restricted physical footprints.

Part Context

This part belongs to Diodes Incorporated's DMP series of lateral MOSFETs. It represents a newer generation designed specifically to optimize the trade-off between conduction losses and switching speed, distinguishing it from standard planar MOSFETs by leveraging advanced lateral structures.