DMP1070UCA3-7

$0.08

Description：MOSFET P-CH 12V 3.6A X4DSN0607-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5055ce656d00 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 3.6A X4DSN0607-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：70mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.45 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：147 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：710mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X4-DSN0607-3
Package / Case：3-XFDFN

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DMP1070UCA3-7

Overview

The DMP1070UCA3-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -12V and a low on-state resistance (RDS(ON)) of 70mΩ at VGS = -4.5V, or 100mΩ at VGS = -2.5V. The device supports a continuous drain current (ID) of -3.6A at +25°C and -3.0A at +70°C when driven at -4.5V. It utilizes an X4-DSN0607-3 package with a total height of 0.22mm. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from -0.40V to -0.95V and a total gate charge (Qg) of 1.45nC.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Features ESD protection on the gate terminal rated at 4kV HBM.
Totally lead-free and fully RoHS compliant, also halogen and antimony free.

Applications

Battery management systems
Load switches
Battery protections

Procurement Notes

Verify the specific ordering suffix against official documentation, as packaging quantities vary between standard tape & reel options. Confirm that the required component meets automotive quality standards if applicable, as standard versions differ from AEC-Q qualified parts. Ensure the selected variant matches the intended thermal and mechanical constraints of the target PCB layout.

Selection Notes

Select this component for compact designs requiring low profile and efficient power handling in battery-centric circuits. Evaluate the RDS(ON) specifications relative to the available gate drive voltage to ensure optimal conduction losses. Consider the thermal resistance characteristics and junction temperature limits during operation to maintain reliability within the specified operating range.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to replace older generation discrete transistors in portable electronics and battery-powered devices where space and efficiency are critical constraints.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific footprint dimensions or electrical thresholds required for direct integration without circuit modification.