DMP1070UFY4-7

$0.09

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a8ce090b3bbf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：48mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：929 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN2015-3
Package / Case：3-XDFN

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DMP1070UFY4-7

Overview

The DMP1070UFY4-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN2015-3 package. It features a drain-source voltage (BVDSS) of -12V and a maximum continuous drain current (ID) of -5A at +25°C. The device offers low on-state resistance (RDS(ON)), specified as 48mΩ max at VGS = -4.5V and ID = -4A. Key electrical parameters include a gate-source voltage (VGSS) rating of ±8V, total power dissipation of 0.8W to 1.9W depending on mounting, and thermal resistance (RθJA) ranging from 66°C/W to 150°C/W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features an ESD protected gate structure to enhance reliability during handling and operation.
Totally lead-free and fully RoHS compliant, with halogen and antimony-free green device construction.

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packing quantity of 3,000 units. Confirm that the component meets AEC-Q100/101/104/200 requirements if intended for automotive applications requiring specific change control and IATF 16949 manufacturing certification. Ensure compatibility with J-STD-020 moisture sensitivity level 1 standards.

Selection Notes

Select this component for designs requiring a compact X2-DFN2015-3 footprint with a -12V breakdown voltage. Evaluate the RDS(ON) specifications across different gate voltages (-4.5V, -2.5V, -1.8V) to ensure optimal conduction losses for the target load current. Consider the thermal resistance values relative to the PCB copper area and substrate type to manage junction temperature effectively under steady-state or pulsed conditions.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for surface-mount installation. The product line emphasizes low input capacitance and fast switching speeds, targeting modern power management solutions where space efficiency and energy conservation are critical design constraints.

Replacement Considerations

Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility, voltage ratings, and thermal characteristics before substituting any alternative components.