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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：48mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：929 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN2015-3
- Package / Case：3-XDFN
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Overview
The DMP1070UFY4Q is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -12V drain-source voltage and an X2-DFN2015-3 package. The device exhibits low on-resistance, with maximum values of 48mΩ at VGS=-4.5V, 60mΩ at VGS=-2.5V, and 90mΩ at VGS=-1.8V. Continuous drain current reaches -5A at +25°C. It includes an ESD protected gate and meets AEC-Q101 standards.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Features an ESD protected gate structure
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm that the component meets IATF 16949 manufacturing facility requirements if strict automotive change control protocols are mandated by your supply chain specifications.
Selection Notes
Select this component when a compact P-channel solution is required for low-voltage automotive environments. The X2-DFN2015-3 package provides space efficiency while maintaining thermal performance suitable for power management tasks. Ensure gate drive voltages align with the specified threshold characteristics for optimal switching performance.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology within a molded plastic X2-DFN2015-3 package. The device is manufactured in facilities certified under IATF 16949 standards, ensuring consistency for high-reliability electronic systems.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package dimensions or general electrical ratings without validating specific parameter tolerances.
