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Product Detailed Parameters
- Description：MOSFET P-CH 12V 3A U-WLB1010-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0.9V, 4.5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 0.9V
- Vgs(th) (Max) @ Id：650mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1010-4
- Package / Case：4-UFBGA, WLBGA
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Overview
The DMP1081UCB4-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes LD-MOS technology to achieve an on-state resistance of 0.065Ω and a total gate charge of 2.5nC at VGS = -4.5V and TA = +25°C. The device supports a drain-source voltage of -12V, a continuous drain current of -3.3A, and a pulsed drain current of 20A. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-WLB1010-4 package with dimensions of 1.0mm x 1.0mm.
Feature Summary
- LD-MOS technology minimizes on-state losses while maintaining superior switching performance
- Low gate threshold voltage enables low turn-on potential for efficient control
- Ultra-low profile CSP package designed for space-constrained applications
- High reliability qualification compliant with JEDEC standards
Applications
- Battery management systems
- Load switches
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per carrier. Confirm that the component meets RoHS 3 compliance requirements and is halogen-free. Ensure the design accommodates the 'Not Recommended for New Design' status indicated in the datasheet documentation before finalizing procurement plans.
Selection Notes
Select this component when designing high-efficiency power management circuits requiring low on-state resistance and fast switching speeds. The low gate threshold voltage makes it suitable for applications driven by lower voltage logic levels. Consider the thermal characteristics and safe operating area limits when determining heat dissipation requirements for steady-state or pulsed operation scenarios.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to minimize on-state resistance while maintaining fast switching capabilities. The device is intended for use in battery management and load switch applications where efficiency and compact footprint are critical design parameters.
Replacement Considerations
Refer to the manufacturer's automotive grade Q-suffix parts list if AEC-Q100/101/200 qualification or PPAP capability is required. Verify pinout compatibility and electrical specifications against alternative P-channel MOSFETs in the U-WLB1010-4 package before substitution.
FAQ
What is the maximum pulsed drain current rating?
The maximum pulsed drain current (IDM) is rated at 20A.
Is this component qualified for automotive applications?
This specific part is qualified to JEDEC standards for high reliability. For automotive applications requiring AEC-Q100/101/200 qualification, consult the related automotive grade parts listed by the manufacturer.
