DMP10H4D2S-13

$0.37

Description：MOSFET P-CH 100V 270MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9294626bca4e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 100V 270MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：4.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：87 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：380mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP10H4D2S-13

Overview

The DMP10H4D2S-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -100V drain-source breakdown voltage and a continuous drain current of -0.27A at +25°C. The device exhibits a maximum on-resistance of 4.2Ω at VGS = -10V and 5.0Ω at VGS = -4.0V. Total gate charge is typically 1.8nC, with input capacitance at 87pF. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low gate threshold voltage for efficient drive requirements
Fast switching speed with low input capacitance
ESD protection up to 2kV (HBM)
Totally lead-free and fully RoHS compliant

Applications

DC-DC converters
Power-management functions
Battery-operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen/antimony-free status. Ensure the selected package variant matches the required surface-mount footprint for the target PCB layout.

Selection Notes

Select this component for applications requiring high-efficiency power management within a small SOT23 package. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions. Consider the low gate charge and fast switching speeds when designing circuits sensitive to transient response or power loss during transitions.

Part Context

This part belongs to the DMP10 series of P-channel MOSFETs designed for minimizing on-state resistance while maintaining superior switching performance. It utilizes a standard SOT23 surface-mount package constructed with molded plastic and a matte tin finish over an alloy leadframe. The device is qualified to JEDEC standards for high reliability.