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Product Detailed Parameters
- Description：MOSFET P-CH 100V 270MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：4.2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：87 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：380mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP10H4D2S-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -100V drain-source breakdown voltage and a maximum continuous drain current of -0.27A at +25°C. The device exhibits a typical on-resistance of 4.2Ω at VGS = -10V and 5.0Ω at VGS = -4.0V. Key dynamic characteristics include an input capacitance of 87pF, total gate charge of 1.8nC, turn-on rise time of 2.6ns, and turn-off fall time of 4.9ns. It operates within a junction temperature range of -55°C to +150°C and is housed in a standard SOT-23 package.
Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Low input capacitance supporting high-frequency operation
- Fast switching speed with minimal delay times
- ESD protection rated up to 2kV (HBM)
Applications
- DC-DC converters
- Power-management functions
- Battery-operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, displays, and memories
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The -7 suffix indicates a tape and reel carrier with a quantity of 3,000 units. Confirm that the required RoHS compliance level matches the project specifications, as the datasheet notes full compliance with EU directives. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a P-channel MOSFET with a -100V rating is required in a compact SOT-23 footprint. The low gate charge and fast switching characteristics make it suitable for applications prioritizing efficiency and speed. Evaluate the on-resistance values at the intended gate drive voltage to ensure adequate performance. Consider the thermal resistance and power dissipation limits relative to the expected operating conditions.
Part Context
This part belongs to the DMP10 series from Diodes Incorporated, designed for high-efficiency power management. It utilizes silicon technology and is packaged in a standard SOT-23 case. The device is lead-free, halogen-free, and antimony-free, meeting green device standards. It is qualified to JEDEC standards for high reliability, with an automotive-compliant variant available under a separate designation.
Replacement Considerations
An automotive-compliant version of this component is available under the part number DMP10H4D2SQ. Verify if the specific reliability qualifications required for the application necessitate the use of this automotive-grade alternative over the standard commercial version.
