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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：4.2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：87 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：380mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP10H4D2SQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of -100V and a continuous drain current of -0.27A at +25°C. The device offers a maximum on-resistance of 4.2Ω at VGS = -10V and 5.0Ω at VGS = -4.0V. Total gate charge is typically 1.8nC, with input capacitance at 87pF. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low gate threshold voltage and low input capacitance for efficient switching
- ESD protected internal structure
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Power-management functions
- Battery operated systems and solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the required revision level matches the latest datasheet specifications. Ensure compliance with IATF 16949 manufacturing facility requirements if strict automotive change control protocols are mandated by the design specification.
Selection Notes
Select this component when designing circuits requiring high-voltage P-channel switching in compact surface-mount packages. The low gate charge supports fast switching speeds suitable for power management applications. Verify that the thermal resistance characteristics align with the intended PCB copper pad layout and ambient operating conditions.
Part Context
This part belongs to the DMP10 series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a standard SOT23 package configuration. The product line is engineered to meet stringent automotive reliability standards while maintaining small physical footprints for space-constrained electronic designs.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
