DMP2007UFG-13

$1.07

Description：MOSFET P-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cf33bd3663fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：4621 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP2007UFG-13

Overview

The DMP2007UFG is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI3333-8 package. It features a drain-source voltage of -20V and a continuous drain current of -40A at case temperature +25°C. The device offers low on-state resistance, specified as 5.5mΩ max at VGS = -10V, 7.0mΩ max at VGS = -4.5V, and 9.0mΩ max at VGS = -2.5V. Thermal characteristics include a junction-to-case thermal resistance of 3.0°C/W and an operating temperature range of -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.

Applications

Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix when purchasing. The -13 suffix indicates tape and reel packaging with a quantity of 3,000 units per reel. Confirm that the required component matches this exact packaging configuration before finalizing procurement orders to ensure compatibility with automated assembly processes.

Selection Notes

Select this component for applications requiring high current handling in a compact footprint. Evaluate the gate drive voltage requirements against the specified RDS(ON) thresholds at -10V, -4.5V, and -2.5V. Ensure the PCB layout accommodates the POWERDI3333-8 package dimensions and provides adequate copper area to manage thermal dissipation effectively within the specified temperature limits.

Part Context

This part belongs to the DMP2007 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are designed to provide low on-resistance and fast switching capabilities. The series utilizes the POWERDI® package technology to offer improved thermal efficiency and reduced board space compared to traditional surface mount packages like SO-8.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching critical parameters such as voltage rating, current capacity, package type, and thermal resistance to ensure functional equivalence without compromising system reliability.