DMP2008UFG-7

$0.45

Description：MOSFET P-CH 20V 14A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5e7e901bee2c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 14A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：6909 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP2008UFG-7

Overview

The DMP2008UFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI3333-8 surface-mount package. It features a drain-source voltage of -20V and a maximum continuous drain current of -14A at +25°C ambient temperature. The device achieves a low on-state resistance (RDS(on)) of 8mΩ at VGS = -4.5V and ID = -12A. It operates within a junction temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards for high reliability.

Feature Summary

Low RDS(ON) ensures minimized on-state losses
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Totally Lead-Free & Fully RoHS Compliant

Applications

Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 automotive qualification standards if deployed in vehicle electronics. Ensure the design accommodates the specified thermal resistance values under actual operating conditions rather than relying solely on datasheet baseline measurements.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages while maintaining robust power handling capabilities. The device is suitable for applications demanding low conduction losses and fast switching speeds. Evaluate the gate threshold voltage characteristics against the available drive voltage levels to ensure reliable turn-on performance across the full operating temperature range.

Part Context

This part belongs to the DMP series of P-channel MOSFETs designed for high-efficiency power management. It utilizes the POWERDI3333-8 case style, which provides a compact solution with enhanced thermal dissipation compared to traditional plastic packages. The component is manufactured using silicon technology and is intended for general-purpose switching applications in portable and industrial equipment.