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Product Detailed Parameters
- Description：MOSFET P-CH 20V 12.7A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：12.7A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：103 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3350 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP2010UFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage rating of -20V and a maximum continuous drain current of -40A at case temperature +25°C. The device achieves a low on-state resistance of 9.5mΩ at VGS = -4.5V and 12.5mΩ at VGS = -2.5V. Key electrical parameters include a gate-source voltage limit of ±10V, a total power dissipation of 0.9W (ambient) or 2.3W (case), and an operating junction temperature range of -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state losses for high efficiency
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- Totally lead-free and fully RoHS compliant
Applications
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official Diodes documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable regulatory standards required for your target market. Ensure compatibility with your manufacturing process regarding moisture sensitivity levels and soldering profiles before placing orders.
Selection Notes
Select this component when space constraints are critical due to its compact PowerDI3333-8 footprint. Evaluate thermal requirements carefully as power dissipation varies significantly between ambient and case mounting conditions. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMP series of P-channel MOSFETs designed for power management applications. It utilizes silicon technology and is manufactured by Diodes Incorporated. The device is intended for use in circuits requiring efficient switching with minimal conduction losses in a small outline package.
Replacement Considerations
Consult official Diodes documentation for qualified equivalent parts. Verify pinout compatibility and electrical parameter margins before substituting.
