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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1686 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMP2012UFDE-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -14A at +25°C. The device offers a low on-resistance of 9mΩ at VGS = -4.5V and 12mΩ at VGS = -2.5V. Packaged in a U-DFN2020-6 (Type E) footprint, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Minimized on-state resistance to reduce conduction losses
- ESD protected gate structure for enhanced reliability
- Lead-free finish with RoHS compliance
Applications
- General purpose interfacing switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the U-DFN2020-6 package dimensions align with the target PCB layout constraints. Ensure compatibility with standard surface mount assembly processes.
Selection Notes
Select this component for applications requiring high-efficiency power management within a compact form factor. The low thermal resistance and small package size make it suitable for space-constrained designs. Evaluate the gate charge characteristics against the driving circuit capabilities to ensure optimal switching performance.
Part Context
This part belongs to the DMP series of P-channel MOSFETs designed for general-purpose switching. It utilizes silicon technology and is housed in a molded plastic U-DFN2020-6 package. The device is intended for use in environments requiring robust thermal performance and reliable operation across a wide temperature range.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.
