DMP2016UFDF-13

$0.14

Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:11dbda1fe5cd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：15mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1710 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP2016UFDF-13

Overview

The DMP2016UFDF-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a drain-source voltage of -20V and a maximum continuous drain current of -9.5A at +25°C. The device achieves a low on-resistance of 15mΩ at VGS = -4.5V and 19mΩ at VGS = -2.5V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance while maintaining superior switching performance.
Features a 0.6mm profile ideal for low-profile applications and includes an ESD protected gate structure.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement plans.

Selection Notes

Select this component when a compact footprint and low on-resistance are critical for power efficiency. Ensure the application voltage does not exceed the -20V rating and consider thermal dissipation requirements given the small package size.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for surface-mount installation. The U-DFN2020-6 package provides a small PCB footprint suitable for space-constrained designs.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Do not substitute without confirming pinout compatibility, electrical ratings, and package dimensions match the original design requirements.