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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：27mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2007 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.52W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP2024UFDF-13 is a 20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 27mΩ at VGS = -4.5V and a continuous drain current (ID) of -7.2A at TA = +25°C. The device utilizes a U-DFN2020-6 package with a 0.6mm profile, offering a PCB footprint of 4mm². Key electrical parameters include a gate-source voltage (VGSS) of ±8V, total gate charge (Qg) of 21.7nC, and a maximum junction temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features a low-profile 0.6mm package ideal for space-constrained applications.
- Incorporates a low gate threshold voltage and fast switching speed characteristics.
Applications
- Battery management systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and is halogen-free if required by your manufacturing standards. Ensure compatibility with the specified U-DFN2020-6 (Type F) land pattern during PCB layout to maintain thermal and electrical integrity.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for efficient power switching. The U-DFN2020-6 package provides a small footprint suitable for dense layouts. Consider the -7.2A continuous current rating and 27mΩ on-resistance at -4.5V gate drive for optimal efficiency in low-voltage DC-DC conversion or battery protection circuits.
Part Context
This part belongs to Diodes Incorporated's portfolio of silicon-based P-channel MOSFETs designed for general-purpose power switching. The 'DMP' prefix typically denotes a P-channel MOSFET within their product line. The device is engineered for applications requiring robust performance in a miniature surface-mount package, balancing conduction losses with switching dynamics.
Replacement Considerations
Consult the manufacturer's official documentation for verified cross-reference data. No direct substitute part numbers are explicitly confirmed in the provided source material.
FAQ
What is the maximum pulsed drain current for the DMP2024UFDF?
The maximum pulsed drain current (IDM) is rated at -55A, based on a 10μs pulse duration with a 1% duty cycle.
Is the DMP2024UFDF suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.
