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Product Detailed Parameters
- Description：MOSFET P-CH 20V 7A/15A 8SO T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：33mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 8 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：834 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP2040USS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -7.0A at +25°C ambient temperature. The device offers a typical static drain-source on-resistance (RDS(ON)) of 26mΩ at VGS = -4.5V and 37.5mΩ at VGS = -2.5V. Packaged in an SO-8 surface-mount case, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Provides fast switching speed and low input capacitance for improved dynamic performance.
- Features low gate threshold voltage and low input/output leakage currents.
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS 2 and RoHS 3 directives as well as halogen and antimony-free requirements. Ensure the SO-8 package dimensions align with the target PCB footprint layout before finalizing procurement.
Selection Notes
Select this component when a single P-channel MOSFET with a -20V rating and up to -7.0A continuous current capability is required. Consider the thermal resistance characteristics and the specific RDS(ON) values at different gate voltages (-4.5V vs -2.5V) to ensure compatibility with the driving circuitry and load requirements.
Part Context
This part belongs to the DMP2040USS series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes an SO-8 surface-mount package designed for efficient heat dissipation and automated assembly processes. The product is classified as a 'Green' device, adhering to environmental standards regarding lead, halogen, and antimony content.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum pulsed drain current for the DMP2040USS-13?
The maximum pulsed drain current (IDM) is specified as -30A, based on a 10μs pulse duration with a 1% duty cycle.
Does the DMP2040USS-13 include an internal body diode?
Yes, the datasheet specifies electrical characteristics for the continuous source-drain diode current (IS) and the diode forward voltage (VSD), confirming the presence of an intrinsic body diode.
