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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SO-8 T&R 2.
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta), 12.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：38mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.5 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1575 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP2067LSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -5.4A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 38mΩ at VGS = -4.5V and 56mΩ at VGS = -2.5V. Total gate charge (Qg) is 27.9nC at VGS = -4.5V and 15.5nC at VGS = -8V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 package.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Low gate threshold voltage enabling easy drive compatibility
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging quantity of 2500 units as documented in the official datasheet. Confirm that the component meets the required automotive or industrial reliability standards if applicable, noting that standard parts may differ from AEC-Q101 qualified variants. Ensure the procurement channel provides valid traceability documentation consistent with manufacturer specifications.
Selection Notes
Select this component when a low-voltage (-20V) P-channel switch is required with moderate current handling capabilities up to 5.4A. The SO-8 package facilitates surface mount assembly. Consider the thermal resistance characteristics and ensure adequate PCB copper area for heat dissipation during steady-state operation. Verify that the gate drive voltage aligns with the specified RDS(ON) test conditions for optimal performance.
Part Context
This part belongs to the DMP2067 series of P-channel MOSFETs designed for minimizing on-state resistance while maintaining superior switching performance. The 'LSS' designation indicates the specific package type and electrical characteristics, while the '-13' suffix denotes the standard tape and reel packaging format used for automated surface-mount assembly processes.
Replacement Considerations
Consult the official Diodes Incorporated datasheet for verified equivalent part numbers. Cross-reference parameters such as BVDSS, ID, RDS(ON), and package dimensions to ensure functional compatibility. Verify pinout configurations match exactly before substituting.
