DMP2069UFY4Q-7

$0.60

Description：MOSFET BVDSS: 8V~24V X2-DFN2015-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0ce0420c8690 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN2015-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：54mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：214 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：530mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN2015-3
Package / Case：3-XDFN

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DMP2069UFY4Q-7

Overview

The DMP2069UFY4Q-7 is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -20V drain-source voltage rating and an X2-DFN2015-3 package. The device offers low on-state resistance, with maximum values of 54mΩ at VGS = -4.5V and 90mΩ at VGS = -1.8V. Continuous drain current reaches -2.5A at +25°C. Key electrical parameters include a gate threshold voltage range of -0.3V to -1.0V, input capacitance of 214pF, and total gate charge of 9.1nC. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Low on-resistance optimized for high efficiency power management applications
Fast switching speed combined with low input/output leakage currents
ESD protection rated up to 3kV
Qualified to AEC-Q101 standards for automotive reliability

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the component matches the specific Diodes Incorporated datasheet DS37106 Rev. 1-2. Confirm the marking code '29P' and date code format align with manufacturing records. Ensure the ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Validate that the part meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation.

Selection Notes

Select this component when a compact P-channel MOSFET with low RDS(ON) is required for space-constrained designs. The X2-DFN2015-3 package provides a small footprint suitable for dense PCB layouts. Consider the thermal resistance of 231°C/W for heat dissipation calculations. Verify that the -20V voltage rating and -2.5A current capacity meet the specific circuit load requirements.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the X2-DFN2015-3 surface-mount package, which is a molded plastic case with nickel-palladium-gold terminals over a copper leadframe. The device is fully lead-free and complies with EU RoHS directives.

Replacement Considerations

Consult official Diodes Incorporated substitution guides or contact the manufacturer directly for verified alternative part numbers. Do not assume cross-compatibility based solely on similar package types or voltage ratings without explicit confirmation from the supplier.