DMP2109UVTQ-7

$0.09

Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1be1399a34e2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：80mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2109UVTQ-7

Overview

The DMP2109UVTQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications, qualified to AEC-Q101 standards. It features a -20V drain-source voltage rating and low on-resistance of 80mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V. The device supports continuous drain currents of -3.7A and -3.1A under specified conditions. Packaged in a TSOT26-6 configuration, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power switching
Low gate threshold voltage for improved drive capability
Low input capacitance for fast switching performance
Automotive qualification with PPAP support

Applications

General purpose interfacing switches
Power management functions
Automotive systems requiring specific change control

Procurement Notes

Verify the component matches the exact part number DMP2109UVTQ-7. Confirm that the package type is TSOT26 and the packing quantity corresponds to the tape and reel format. Ensure the supplier provides documentation confirming AEC-Q101 qualification and compliance with RoHS directives before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring a P-channel MOSFET with a -20V breakdown voltage. Consider its low on-resistance characteristics for minimizing conduction losses in power management applications. Verify that the thermal resistance and power dissipation capabilities align with the system's operating temperature requirements.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-compliant MOSFETs. It is manufactured in IATF 16949 certified facilities, ensuring consistent quality for automotive use. The device is designed to meet stringent automotive reliability standards while providing efficient switching capabilities.

Replacement Considerations

Check for direct substitutes within the same product family or similar specifications from other manufacturers. Ensure any replacement maintains the same package dimensions and pinout compatibility. Verify that alternative parts also meet AEC-Q101 requirements if used in automotive applications.